Product Number: 2790
CAS Number: 13596-23-1
- Boiling Point: 213 - 215 °C (lit.)
- Melting Point: -67 °C
- Density: 1.61 g/mL at 25 °C
- Refractive index: n20/D 1.513
- Appearance: colorless liquid
- Vapor pressure: 90°: 10 mm ΔHvap: 51 kJ/mole
Silicon deposition, Silicon nanowires, trisilane oligosilanes
Purity by GC: 99.0% minimum
Purity by ICP: 99.999% minimum
Silicon nitride and Silicon dioxide are some of the most widely used dielectric materials in Si microelectronics processing and can be deposited by CVD and ALD methods. Recent advances in ALD processes are being used to lower the thermal budget for the deposition of Silicon dioxide and Silicon nitride. There is considerable interest in low-temperature high-quality silicon nitride thin films for gate spacers of dynamic random access memory (DRAM) devices and other barrier layers. Octachlorotrisilane is being recognized as a promising precursor for such ALD processes to be used in high volume manufacturing. Octachlorotrisilane is a corrosive, water-reactive, colorless liquid that requires extreme care when handling and transporting.
For other customer specific application octachlorotrisilane can be supplied in properly documented customer-supplied canisters or bubblers. Wonik Materials North America will also provide custom bubbler or canister configurations upon request.