Hexachlorodisilane    (HCDS)


structures/Hexachlorodisilane (HCDS).png

Product Number: 1962

CAS Number: 13465-77-5

Molecular Weight: 268.89

Molecular Formula: Cl6Si     


Silicon nitride and Silicon dioxide are some of the most widely used dielectric materials in Si microelectronics processing and can be deposited by CVD and ALD methods. Recent advances in ALD processes are being used to lower the thermal budget for the deposition of Silicon dioxide and Silicon nitride. There is considerable interest in low-temperature high-quality silicon nitride thin films for gate spacers of dynamic random access memory (DRAM) devices and other barrier layers. Hexachlorodisilane (HCDS) is being recognized as a precursor for such ALD processes used in high volume manufacturing.


  • Appearance: colorless liquid
  • Density: 1.58 g/mL at 0 °C
  • Melting Point: -1 °C
  • Boiling Point: 144-145 °C @ 760 torr
  • Vapor pressure: 100 torr @85 °C


Purity by GC: 99.7% minimum                     

Purity by ICP/MS: 99.999% (EG), 99.99999% (UHP)



Si, SiN, SiON, SiO2 layer deposition by CVD or ALD



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